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參數資料
| 型號： | 5962R9863601VPX |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運算放大器 |
| 英文描述： | OP-AMP, 2500 uV OFFSET-MAX, CDIP8 |
| 封裝： | CERAMIC, DIP-8 |
| 文件頁數： | 3/13頁 |
| 文件大小： | 76K |
| 代理商： | 5962R9863601VPX |
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-98636
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
11
DSCC FORM 2234
APR 97
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1
Final electrical
parameters (see 4.2)
1,2,3,4, 1/
5,6
1,2,3,4, 1/
5,6
1,2,3,4, 1/ 2/
5,6
Group A test
requirements (see 4.4)
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6,
9,10,11
Group C end-point electrical
parameters (see 4.4)
1
1,2,3 2/
Group D end-point electrical
parameters (see 4.4)
1
1,2,3
Group E end-point electrical
parameters (see 4.4)
---
1/ PDA applies to subgroup 1.
2/ See table IIB for delta measurement parameters.
TABLE IIB. 240 hour burn-in and group C end point electrical parameters. (TA = +25
°C)
Parameter
Device type
Limits
Delta
Units
Min
Max
Min
Max
VIO
All
-2
2
-0.5
+0.5
mV
+IIB
All
-100
100
-50
+50
pA
-IIB
All
-100
100
-50
+50
pA
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-
STD-883.
b.
TA = +125
°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test
circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-
STD-883.
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