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參數資料
| 型號： | 5FWJ2C48M |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | 12-10D1A, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 268K |
| 代理商： | 5FWJ2C48M |
2
AMMC-6420 DC Specifications/Physical Properties [1]
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (
θch-b) = 10.7°C/W at Tchannel (Tc) = 120°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specifications are derived from measurements in a 50
test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or power matching.
AMMC-6420 RF Specifications [3, 4, 5] (TA= 25°C, Vd=5.5, Id(Q)=800 mA, Zo=50
)
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled
over several production lots
Gain at 12 GHz
P-1dB at 8 GHz
P-1dB at 18 GHz
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
(under any RF power drive and temperature)
(Vd=5.5 V, Vg set for Id Typical)
mA
800
1000
Vg
Gate Supply Operating Voltage
(Id(Q) = 800 (mA))
V
-0.8
-0.6
-0.4
θ
ch-b
Thermal Resistance[2]
(Backside temperature, Tb = 25°C)
°C/W
8.9
Symbol
Parameters and Test
Conditions
Units
Minimum
Typical
Maximum
Sigma
Gain
Small-signal Gain[4]
dB
16.5
20
0.45
P-1dB
Output Power at 1dB
Gain Compression
dBm
27
29
0.27
P-3dB
Output Power at 3dB
Gain Compression
dBm
30
0.23
OIP3
Third Order Intercept
Point;
f=100MHz;
Pin=-20dBm
dBm
38
0.75
RLin
Input Return Loss[4]
dB
-3
0.23
RLout
Output Return Loss[4]
dB
-6
0.25
Isolation
Min. Reverse Isolation
dB
-45
1.10
LSL
17
18
19
20
LSL
27
28
29
30
31
LSL
28
29
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