- 您現在的位置：買賣IC網 > PDF目錄91563 > 5KP10-E3 (VISHAY SEMICONDUCTORS) 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE PDF資料下載
參數資料
| 型號： | 5KP10-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE P600, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 108K |
| 代理商： | 5KP10-E3 |
5KP5.0 thru 5KP188A
Document Number 88308
Rev. 1.2, 27-Oct-04
Vishay Semiconductors
www.vishay.com
1
formerly General Semiconductor
TRANSZORB Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188 V
Peak Pulse Power 5000 W
Features
Glass passivated junction
5000 W peak pulse power capability with a
10/1000
s waveform, repetition rate (duty cycle):
0.05 %
Excellent clamping capability
Low incremental surge resistance
Very fast response time
Devices with V(BR) > 10 V ID are typically less than
1.0
A
Available in uni-directional polarity only
Meets MSL level 1 per J-STD-020C
AEC-Q101 qualified
Mechanical Data
Case: Molded plastic body over glass passivated
junction. Epoxy meets UL 94V-0 Flammability rating
Terminals:
Solder
plated
or
matte
tin
plated
(E3 Suffix) leads, Solderable per J-STD-002B and
Mil-STD-750, Method 2026
High temperature soldering guaranteed:
265 °C/10 seconds, 0.375" (9.5 mm) lead length,
5 lbs. (2.3 kg) tension
Polarity: The color band denotes the cathode, which
is positive with respect to the anode under normal
TVS operation
Maximum Ratings and Characteristics
Ratings 25 °C, unless otherwise specified
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Parameter
Test condition
Symbol
Value
Unit
Peak pulse power dissipation
10/1000
s waveform(1)
PPPM
5000
W
Peak pulse current
10/1000
s waveform(1)
IPPM
See next table
A
Steady state power dissipation
lead lengths 0.375“ (9.5 mm),
TL = 75 °C
(2)
PM(AV)
8.0
W
Peak forward surge current
8.3 ms single half sine-wave(3)
IFSM
600
A
Instantaneous forward voltage
100 A(3)
VF
3.5
V
Operating junction and storage
temperature range
TJ, TSTG
-55 to +175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 5KP110A/62-E3 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP120/54-E3 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP120/56-E3 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP13/93-E3 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP13A/4F-E3 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 5KP10-E3/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5KW 10V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP10-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP10-E3/54 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP10-E3/73 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP10E3/TR13 | 制造商:Microsemi Corporation 功能描述:5000W, STAND-OFF VOLTAGE = 10V, ? 10%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 10VWM 18.8VC P600 |
發布緊急采購，3分鐘左右您將得到回復。