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參數資料
型號: 5KP12HE3/54
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN
文件頁數: 1/6頁
文件大小: 89K
代理商: 5KP12HE3/54
5KP5.0 thru 5KP188A
Vishay General Semiconductor
Document Number: 88308
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
P600, glass passivated chip junction
Available in uni-directional polarity only
5000 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
5000 W
PD
8.0 W
IFSM
500 A
TJ max.
175 °C
Case Style P600
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)
PPPM
5000
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
8.0
W
Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)
IFSM
600
A
Instantaneous forward voltage at 100 A (2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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