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參數資料
| 型號： | 5KP51A-T |
| 廠商： | RECTRON LTD |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, R-6, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 5KP51A-T |
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 5000 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
TVS
5KP
SERIES
R-6
5000 WATT PEAK POWER 8.0 WATTS STEADY STATE
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types 5KP5.0 thru 5KP110
Electrical characteristics apply in both direction
2002-12
Ratings at 25
oC ambient temperature unless otherwise specified.
NOTES :
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25
oC per Fig.2.
TJ, TSTG
-55 to + 150
0 C
Operating and Storage Temperature Range
RATINGS
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
Steady State Power Dissipation at TL = 75
oC lead lengths
0.375” (9.5mm) (Note 2)
SYMBOL
PM(AV)
IFSM
Amps
UNITS
Instantaneous Forward Voltage at 100A, (Note 3)
Watts
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1, FIG.1)
Minimum 5000
8.0
400
VALUE
PPPM
Watts
IPPM
Amps
SEE TABLE 1
VF
3.5
Volts
.360 (9.1)
.340 (8.6)
DIA.
.052 (1.3)
.048 (1.2)
DIA.
1.0 (25.4)
MIN.
.340 (8.6)
.360 (9.1)
1.0 (25.4)
MIN.
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| 5KP54A-B | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
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| 5KP58CA-T | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP58C-B | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 5KP51A-TP | 功能描述:TVS 二極管 - 瞬態電壓抑制器 DIODE TVS 5000W 48V BIDIR R-6 RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP51-B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 51Vso 40VAC 61A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP51C | 功能描述:TVS 二極管 - 瞬態電壓抑制器 51Vso 40VAC 55A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP51CA | 功能描述:TVS 二極管 - 瞬態電壓抑制器 51Vso 40VAC 61A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP51CA _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
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