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參數資料
型號: 5KP58A-1-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE P600, 2 PIN
文件頁數: 1/4頁
文件大?。?/td> 50K
代理商: 5KP58A-1-E3
5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88308
www.vishay.com
11-Mar-04
1
TRANSZORB Transient Voltage Supressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 5000W
Case Style P600
0.052 (1.32)
0.048 (1.22)
0.360 (9.1)
0.340 (8.6)
DIA.
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
5000W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Very fast response time
Devices with V(BR) > 10V ID are typically less than 1.0
A
Available in uni-directional polarity only
Mechanical Data
Case: Molded plastic body over glass passivated junction
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
265
°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Polarity: The color band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
Mounting Position: Any
Weight: 0.07 oz., 2.1 g
Packaging codes/options:
1/750 ea. per Bulk Box
4/800 ea. per 13" Reel (52mm Tape)
23/300 ea. per Ammo Box (52mm Tape)
Maximum Ratings and Characteristics Ratings at 25°C unless otherwise noted.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000s waveform (1)
PPPM
5000
W
Peak pulse current with a 10/1000s waveform (1)
IPPM
See next table
A
Steady state power dissipation at TL = 75°C
PM(AV)
8.0
W
lead lengths 0.375” (9.5mm)(2)
Peak forward surge current, 8.3ms single half sine-wave (3)
IFSM
600
A
Instantaneous forward voltage at 100A(3)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
–55 to +175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.
(3) Measured on 8.3ms single half sine-wave or equivalent square wave,
duty cycle = 4 pulses per minute maximum
Extended
Voltage
Range
相關PDF資料
PDF描述
5KP8.0-23-E3 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
5KP22-4 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
5KP5.0A-23 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
5KP7.5A-1 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
5KP160A-1-E3 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相關代理商/技術參數
參數描述
5KP58A-B 功能描述:TVS 二極管 - 瞬態電壓抑制器 5% RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
5KP58A-E3/1 功能描述:TVS 二極管 - 瞬態電壓抑制器 5KW 58V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
5KP58A-E3/23 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 58V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
5KP58A-E3/4 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 58V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
5KP58A-E3/51 功能描述:TVS 二極管 - 瞬態電壓抑制器 5000W 58V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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