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參數(shù)資料
| 型號： | 5KP8.0A/58 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE P600, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 108K |
| 代理商： | 5KP8.0A/58 |
5KP5.0 thru 5KP188A
Document Number 88308
Rev. 1.2, 27-Oct-04
Vishay Semiconductors
www.vishay.com
1
formerly General Semiconductor
TRANSZORB Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188 V
Peak Pulse Power 5000 W
Features
Glass passivated junction
5000 W peak pulse power capability with a
10/1000
s waveform, repetition rate (duty cycle):
0.05 %
Excellent clamping capability
Low incremental surge resistance
Very fast response time
Devices with V(BR) > 10 V ID are typically less than
1.0
A
Available in uni-directional polarity only
Meets MSL level 1 per J-STD-020C
AEC-Q101 qualified
Mechanical Data
Case: Molded plastic body over glass passivated
junction. Epoxy meets UL 94V-0 Flammability rating
Terminals:
Solder
plated
or
matte
tin
plated
(E3 Suffix) leads, Solderable per J-STD-002B and
Mil-STD-750, Method 2026
High temperature soldering guaranteed:
265 °C/10 seconds, 0.375" (9.5 mm) lead length,
5 lbs. (2.3 kg) tension
Polarity: The color band denotes the cathode, which
is positive with respect to the anode under normal
TVS operation
Maximum Ratings and Characteristics
Ratings 25 °C, unless otherwise specified
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Parameter
Test condition
Symbol
Value
Unit
Peak pulse power dissipation
10/1000
s waveform(1)
PPPM
5000
W
Peak pulse current
10/1000
s waveform(1)
IPPM
See next table
A
Steady state power dissipation
lead lengths 0.375“ (9.5 mm),
TL = 75 °C
(2)
PM(AV)
8.0
W
Peak forward surge current
8.3 ms single half sine-wave(3)
IFSM
600
A
Instantaneous forward voltage
100 A(3)
VF
3.5
V
Operating junction and storage
temperature range
TJ, TSTG
-55 to +175
°C
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