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參數(shù)資料
| 型號(hào)： | 5KP8.0C/1-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, P600, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 71K |
| 代理商： | 5KP8.0C/1-E3 |
Now
offered
in both
Uni &
Bi-directional
5KP5.0 thru 5KP110CA
TRANSZORB
Transient Voltage Supressors
Stand-off Voltage 5.0 to 110 V
Peak Pulse Power 5000 W
Case Style P600
0.052 (1.32)
0.048 (1.22)
0.360 (9.1)
0.340 (8.6)
DIA.
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
5000W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Very fast response time
Devices with V(BR) > 10V ID are typically less than 1.0
A
Mechanical Data
Case: Molded plastic body over glass passivated junction
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Polarity: For uni-directional types, the color band
denotes the cathode, which is positive with respect to the
anode under normal TVS operation
Mounting Position: Any
Weight: 0.07oz., 2.1g
Packaging codes/options:
1/750 ea. per Bulk Box
4/800 ea. per 13” Reel (52mm Tape)
23/300 ea. per Ammo Box (52mm Tape)
Maximum Ratings and Characteristics Ratings at 25°C unless otherwise noted.
For bidirectional use C or CA suffix. (e.g. 5KP5.0C, 5KP110CA). Electrical characteristics apply in both directions.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000s waveform (1)
PPPM
Minimum 5000
W
Peak pulse current with a 10/1000s waveform (1)
IPPM
See next table
A
Steady state power dissipation at TL = 75°C
PM(AV)
8.0
W
lead lengths 0.375” (9.5mm)(2)
Peak forward surge current, 8.3ms single half sine-wave (3)
IFSM
500
A
Instantaneous forward voltage at 100A(3)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
–55 to +175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.
(3) Measured on 8.3ms single half sine-wave or equivalent square wave,
duty cycle = 4 pulses per minute maximum (unidirectional only).
8/15/01
相關(guān)PDF資料 |
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| 5KP110 | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
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| 5KP48A | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP10CA/1 | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 5KP16C/23 | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
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| 5KP85/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5000W 85V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP85A | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 85Vso 66VAC 36A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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