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參數資料
| 型號： | 5SDD31H6000 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3246 A, 6000 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/6頁 |
| 文件大小： | 236K |
| 代理商： | 5SDD31H6000 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
6000 V
IF(AV)M =
3246 A
IF(RMS) =
5099 A
IFSM
=
40×10
3 A
VF0
=
0.894 V
rF
=
0.166 m
Rectifier Diode
5SDD 31H6000
Doc. No. 5SYA1183-02 May 09
Optimum power handling capability
Very low on-state losses
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...150°C, Note 1
6000
V
Non-repetitive peak reverse voltage
VRSM
f = 50 Hz, tp = 10ms, Tj = -40...150°C, Note 1
6000
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Max. (reverse) leakage current
IRRM
VRRM, Tj = 150°C
120
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C.
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
FM
45
50
55
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Weight
m
0.9
kg
Housing thickness
H
FM = 50 kN, Ta = 25 °C
25.5
26.5
mm
Surface creepage distance
DS
40
mm
Air strike distance
Da
20
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
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