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參數(shù)資料
| 型號(hào)： | 5SDD48H3200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4700 A, 3200 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 236K |
| 代理商： | 5SDD48H3200 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
3200 V
IF(AV)M =
4700 A
IF(RMS) =
7390 A
IFSM
=
61×10
3 A
VF0
=
0.992 V
rF
=
0.067 m
Rectifier Diode
5SDD 48H3200
Doc. No. 5SYA1182-00 Sept. 07
Optimum power handling capability
Very low on-state losses
Blocking
Maximum rated values
Note 1
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
3200
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Max. (reverse) leakage current
IRRM
VRRM, Tj = 160°C
100
mA
Derating factor of 0.13% per °C is applicable for Tj below 0 °C.
Mechanical data
Maximum rated values
Note 1
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
FM
45
50
55
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Weight
m
0.9
kg
Housing thickness
H
FM = 50 kN, Ta = 25 °C
25.5
26.5
mm
Surface creepage distance
DS
40
mm
Air strike distance
Da
20
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
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