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參數(shù)資料
| 型號(hào)： | 5SLY12F1200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 75 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 7.40 X 7.40 MM, DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 103K |
| 代理商： | 5SLY12F1200 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
1200 V
IF
=
75 A
Die size: 7.4 x 7.4 mm
Doc. No. 5SYA 1682-00 Nov 09
Ultra low losses
Fast and soft reverse-recovery
Highly rugged SPT+ design
Passivation: Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current
IF
75
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
150
A
Junction temperature
Tvj
-40
150
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
1.8
V
Continuous forward voltage
VF
IF = 75 A
Tvj = 125 °C
1.85
V
Tvj = 25 °C
100
A
Continuous reverse current
IR
VR = 1200 V
Tvj = 125 °C
0.75
mA
Tvj = 25 °C
65
A
Peak reverse recovery current
Irr
Tvj = 125 °C
85
A
Tvj = 25 °C
10
C
Recovered charge
Qrr
Tvj = 125 °C
19
C
Tvj = 25 °C
250
ns
Reverse recovery time
trr
Tvj = 125 °C
360
ns
Tvj = 25 °C
3.6
mJ
Reverse recovery energy
Erec
IF = 75 A,
VR = 600 V,
di/dt = 1600 A/s,
Lσ = 60 nH,
Inductive load,
Switch:
1x 5SMY12J1200
Tvj = 125 °C
7.5
mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLY 12F1200
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