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參數(shù)資料
| 型號： | MC-4R128FKE8S |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| 中文描述： | 直接Rambus公司的DRAM的SO - RIMM的模塊128兆字節(jié)（6400字× 18位） |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 123K |
| 代理商： | MC-4R128FKE8S |
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confirm that this is the latest version.
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availability and additional information.
MOS INTEGRATED CIRCUIT
MC-4R128FKE8S
Direct Rambus DRAM SO-RIMM
TM
Module
128M-BYTE (64M-WORD x 18-BIT)
DATA
SHEET
Document No. E0139N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Elpida Memory,Inc. 2001-2002
Description
The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable
for use in a broad range of applications including computer memory, mobile personal computers, networking
systems, and other applications where high bandwidth and low latency are required.
MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (
μ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design
technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous
transactions per device.
Features
160 edge connector pads with 0.65mm pad spacing
128 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4R128FKE8S-845 | Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKK6K | 128MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R128FKK6K-840 | 128MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R128FKK8K | 128MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R128FKK8K-840 | 128MB 32-bit Direct Rambus DRAM RIMM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R128FKE8S-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8S-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKK6K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R128FKK6K-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R128FKK8K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB 32-bit Direct Rambus DRAM RIMM Module |
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