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參數資料
| 型號： | 61113-005 |
| 廠商： | MICROPAC INDUSTRIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, LCC-3 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 81K |
| 代理商： | 61113-005 |
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut St., Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 15
61113
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB)
ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
SYMBOL
BV
CBO
MIN
40
MAX
UNITS
V
dc
V
dc
V
dc
V
dc
μ
A
TEST CONDITIONS
I
C
= 10
μ
A, I
E
= 0
I
C
= 10
μ
A , I
B
= 0
μ
A
I
C
= 10
m
A , I
B
= 0
μ
A
I
C
= 0, I
E
= 10
μ
A
V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150
°
C
V
CE
= 20V
NOTE
Collector-Emitter Breakdown Voltage
BV
CEO
BV
CES
BV
EBO
I
CBO
40
Collector-Emitter Sustaining Voltage
15
Emitter-Base Breakdown Voltage
4.5
Collector-Base Cutoff Current
0.4
30
μ
A
Collector-Emitter Cutoff Current
I
CES
0.4
μ
A
Forward-Current Transfer Ratio
h
fe
h
fe
h
fe
h
fe4
h
fe6
-
120
-
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 1V, I
C
= 10mA @ -55oC
V
CE
= 0.35V, I
C
= 10mA @ -55
o
C
20
-
20
-
20
-
1
30
-
Collector-Emitter Saturation Voltage
V
CE (SAT)
V
CE (SAT)
V
CE (SAT)
V
CE (SAT)
V
BE (SAT)
V
BE (SAT)
V
BE (SAT)
0.20
V
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA @ +125
o
C
I
C
= 30mA, I
B
= 3mA
I
C
= 100mA, I
B
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA @ +125
o
C
I
C
= 10mA, I
B
= 1mA @ -55
o
C
I
C
= 30mA, I
B
= 3mA
I
C
= 100mA, I
E
= 10mA
1
0.30
V
0.25
V
0.50
V
1
Base-Emitter Saturation Voltage
0.7
0.85
V
1
0.59
-
V
1.02
V
1.15
V
V
BE (SAT)
1.60
V
1
SMALL-SIGNAL CHARACTERISTICS
Current-Gain – Bandwidth Product
f
r
500
MHz
V
CB
= 10V, 100kHz,
<
f
<
1 MHz
V
EB
= 0.5 V, 100kHz,
<
f
<
1 MHz
Input Capacitance
(Output Open Capacitance)
C
IBO
25
pF
Turn-On Time
t
on
35
nS
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Turn-Off Time
t
off
300
nS
NOTES:
1.
Pulse width
<
300
μ
s, duty cycle
<
2.0%.
SELECTION GUIDE
PART NUMBER
61113-001
61113-002
61113-003
61113-004
61113-005
PART DESCRIPTION
2N2369AUB PNP transistor, commercial version
2N2369AUB PNP transistor, JAN level screening
2N2369AUB PNP transistor, JANTX level screening
2N2369AUB PNP transistor, JANTXV level screening
2N2369AUB PNP transistor, JANS level screening
NOTE:
Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.
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