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參數(shù)資料
| 型號(hào)： | 61LV51216 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| 中文描述： | 為512k × 16高速異步 |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大小： | 101K |
| 代理商： | 61LV51216 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/10/05
1
IS61LV51216
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time:
— 8, 10, and 12 ns
CMOS low power operation
Low stand-by power:
— Less than 5 m
A
(typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV51216 is a high-speed, 8M-bit static RAM
organized as 525,288 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A data
byte allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS61LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
MARCH 2005
A0-A18
CE
OE
WE
UB
LB
512K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 6200 | 4700 |
| 6205N | EVALUATION BOARD |
| 621KD07NX | 4 to 510 Volts Varistor 0.8 to 47 Joule |
| 621KD10NX | 6 to 680 Volts Varistor 2.0 to 124.0 Joule |
| 621KD14NX | 7 to 1000 Volts Varistor 4.2 to 336.0 Joule |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 61LV5121612T | 制造商: 功能描述: 制造商:Integrated Silicon Solution Inc 功能描述: 制造商:undefined 功能描述: |
| 61LV5128 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 HIGH-SPEED CMOS STATIC RAM |
| 61-M10 | 制造商:Amphenol Corporation 功能描述: 制造商:TE Connectivity 功能描述: |
| 61M12-H0 | 制造商:Grayhill 功能描述:61M12-H0 NS, NO DETENT, 4.0 IN CONNECTO - Bulk 制造商:Grayhill 功能描述:OPTICAL ENCODER |
| 61M12-H10 | 功能描述:ENCODER OPT NS, NO DETENT, 4.0 I 制造商:grayhill inc. 系列:61M 零件狀態(tài):在售 編碼器類型:光學(xué) 輸出類型:二進(jìn)制（絕對(duì)） 每轉(zhuǎn)脈沖數(shù):12 電壓 - 電源:5V 致動(dòng)器類型:1/4" 直徑扁平端 棘爪:是 內(nèi)置開關(guān):無 安裝類型:面板，PCB 通孔 朝向:垂直 端子類型:PC 引腳 旋轉(zhuǎn)壽命（最少次數(shù)）:1M 標(biāo)準(zhǔn)包裝:1 |
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