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參數資料
| 型號： | 6CWT10FNTRR-E |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 102K |
| 代理商： | 6CWT10FNTRR-E |
Document Number: 94662
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Jun-09
1
High Performance Schottky
Generation 5.0, 2 x 3 A
6CUT10-E, 6CWT10FN-E
Vishay High Power Products
FEATURES
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
APPLICATIONS
Specific for PV cells bypass diode
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
DC/DC systems
Increased power density systems
PRODUCT SUMMARY
IF(AV)
2 x 3 A
VR
100 V
Maximum VF at 3 A at 125 °C
0.63 V
6CUT10-E
6CWT10FN-E
D-PAK (TO-252AA)
I-PAK (TO-251AA)
Base
common
cathode
Common
cathode
2
4
13
Anode
Base
common
cathode
Common
cathode
2
4
13
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
100
V
VF
3 Apk, TJ = 125 °C (typical, per leg)
0.6
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
6CUT10-E
6CWT10FN-E
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
per leg
IF(AV)
50 % duty cycle at TC = 166 °C, rectangular waveform
3
A
per device
6
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
440
10 ms sine or 6 ms rect. pulse
70
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 4 A, L = 1.5 mH
12
mJ
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse.
See fig. 8
IAS at
TJ max.
A
相關PDF資料 |
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| 6CUT10-E | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-251AA |
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| 6CWT10FNTRL-E | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 6CWT10FN-E | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
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