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參數資料
| 型號： | 6GBU10 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 橋式整流 |
| 英文描述： | 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件頁數： | 1/5頁 |
| 文件大小： | 124K |
| 代理商： | 6GBU10 |
6.0 Amps Single Phase Full Wave
Bridge Rectifier
I
O(AV) = 6A
V
RRM = 50/ 1200V
6GBU Series
1
Preliminary Data Sheet I2718 rev. A 12/00
www.irf.com
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case
Leads are suitable for high temperature
Soldering at 260°C for 8-10 seconds
UL evaluation is under process
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Parameters
6GBU
Units
Major Ratings and Characteristics
I
O
6A
@ T
C
100
°C
I
FSM
@50Hz
175
A
@ 60Hz
182
A
I2t
@ 50Hz
154
A2s
@ 60Hz
138
A2s
VRRM
range
50 to 1200
V
T
J
- 55 to 150
oC
6GBU
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| 6GBU12 | 6 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 6GBU4 | 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
| 6GBU2 | 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
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