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參數資料
| 型號： | 6MBI450U4-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 600 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-29 |
| 文件頁數： | 4/14頁 |
| 文件大小： | 519K |
| 代理商： | 6MBI450U4-170 |
H04-004-03a
MS5F6097
14
a
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
(*4) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*5) Biggest internal terminal resistance among arm.
m
Ω
Lead resistance,
terminal-chip(*5)
R lead
-
1.00
Forward on voltage
VF
(terminal)
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
-
-
VF
(chip)
trr
-
-
VGE=±15V
Rg = 1.1
Ω
T
Resistance
R
T = 25°C
T =100°C
B
B value
T = 25/50°C
-
nF
42
0.62
0.39
495
3375
520
3450
K
3305
Ω
-
-
-
0.05
0.55
0.09
2.25
2.45
465
-
3.20
2.25
2.65
-
-
Units
-
2.40
Maximum
Ratings
1700
-
-
2.80
2.95
-
-
V
8.5
V
VGE(th)
nA
3.0
mA
600
6.5
-
-
-
Symbols
VGE=±20V
VCE = 20V
VCE = 0V
Conditions
VGE = 0V
VCE = 1700V
IGES
ICES
Screw
Torque
-
Mounting (*3)
Terminals (*4)
Viso
between terminal and copper base (*1)
between thermistor and others (*2)
-Ic pulse
Pc
Tj
Tstg
Storage temperature
Isolation
voltage
max.
typ.
3400
VAC
4.5
3.5
N m
Units
-Ic
min.
Characteristics
-40 ~ +125
900
2080
150
A
°C
W
Gate-Emitter voltage
Collector current
Junction temperature
Collector Power Dissipation
450
AC : 1min.
1ms
1 device
V
V
±20
600
450
1200
900
VGES
Ic
Icp
1ms
Continuous
Items
Symbols
Conditions
VCES
Collector-Emitter voltage
Vcc = 900V
Ic = 450A
μ
s
1.50
0.30
2.60
-
1.20
0.60
-
V
2.00
0.18
1.80
2.15
-
0.6
-
5000
-
-
μ
s
IF = 450A
-
-
IF = 450A
VGE=0V
VCE(sat)
(terminal)
Cies
ton
VCE=10V,VGE=0V,f=1MHz
toff
tf
tr
tr (i)
Ic = 450mA
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE=15V
Ic = 450A
4.5
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Items
I
Zero gate voltage
Collector current
Reverse recovery time
Turn-off time
Input capacitance
Collector-Emitter
saturation voltage
Turn-on time
VCE(sat)
(chip)
a
a
a
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