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參數資料
| 型號： | 6MBP200RA-060 |
| 英文描述： | IGBTs |
| 中文描述： | IGBT的 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 397K |
| 代理商： | 6MBP200RA-060 |
6MBP 200RA-060
IGBT IPM
600V
6×200A
Intelligent Power Module ( R-Series )
I
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Ratings
Units
Min.
Max.
450
500
400
600
200
400
200
735
20
V
Z
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
V
DC
V
DC(Surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
V
CC
V
IN
I
IN
V
ALM
I
ALM
T
j
T
OP
T
stg
V
iso
Mounting *1
Terminals *1
0
0
200
0
Continuous
1ms
Duty=58.8%
One Transistor
A
W
0
0
1
mA
V
mA
0
V
CC
15
150
100
125
2500
3.5
3.5
-20
-40
°C
A.C. 1min.
V
Note:
*1:
Recommendable Value; 2.5
～
3.0 Nm (M5)
Electrical Characteristics of Power Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Symbols
I
CES
V
CE(Sat)
V
F
Conditions
Min.
Typ.
Max.
1.0
2.8
3.0
Units
mA
V
V
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
V
CE
=600V,
Input Termnal Open
I
C
=200A
-I
C
=200A
INV
Electrical Characteristics of Control Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Current of P-Line Side Driver
(One Unit)
Current of N-Line Side Driver
(Three Units)
Symbols
I
CCP
I
CCN
Conditions
Min.
Typ.
Max.
Units
f
SW
=0~15kHz, T
C
=-20~100°C
f
SW
=0~15kHz, T
C
=-20~100°C
On
Off
R
IN
=20k
V
DC
=0V, I
C
=0A, Case Temp.
6
32
114
1.70
2.40
24
1.00
1.70
1.35
2.05
8.0
V
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
t
DOC
t
ALM
R
ALM
V
UV
V
H
110
125
20
Surface of IGBT Chip
150
20
T
j
=125°C
T
j
=25°C
300
A
μs
ms
10
2
1500
1.5
1425
11.0
0.2
1575
12.5
Dynamic Characteristics
( at T
C
=T
j
=125°C, V
CC
=15V )
Items
Symbols
t
ON
t
OFF
t
RR
Conditions
Min.
0.3
Typ.
Max.
Units
I
C
=200A, V
DC
=300V
Switching Time
3.6
0.4
μs
I
F
=200A, V
DC
=300V
Thermal Characteristics
Items
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Conditions
Min.
Typ.
Max.
0.17
0.36
Units
Inverter IGBT
Diode
With Thermal Compound
Thermal Resistance
°C/W
0.05
I
Outline Drawing
Screw Torque
V
IN(th)
Input Signal Threshold Voltage
V
V
Nm
mA
°C
V
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