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參數資料
| 型號： | 6N100F |
| 廠商： | IXYS Corporation |
| 英文描述： | Power MOSFETs |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 820K |
| 代理商： | 6N100F |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
6
A
A
A
24
6
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
20
mJ
mJ
500
dv/dt
15
V/ns
P
D
180
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 500uA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
50
μ
A
1 mA
1.9
T
J
= 125
°
C
R
DS(on)
98732B (9/02)
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
●
RF capable MOSFETs
●
Double metal process for low gate
resistance
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
Applications
●
DC-DC converters
●
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
13.5 MHz industrial applications
●
Pulse generation
●
Laser drivers
●
RF amplifiers
Advantages
●
Space savings
●
High power density
TO-247 AD (IXFH)
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 6N100F
IXFT 6N100F
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 1000 V
= 6 A
= 1.9
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