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參數資料
| 型號： | 6N1135-X009T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | OPTOCOUPL DC-IN 1CH TRANS W/BASE DC-OUT 8PDIP SMD - Tape and Reel |
| 中文描述： | High Speed Optocouplers 1Mbd High-Speed Trans Out CTR>5% |
| 文件頁數： | 4/9頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 6N1135-X009T |
www.vishay.com
4
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83909
Rev. 1.7, 19-Oct-10
6N1135, 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Note
As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 4 - Collector Current vs. Collector Emitter Voltage
Fig. 5 - Collector Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Dark Current vs. Ambient Temperature
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Pollution degree (DIN VDE 0109)
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
V
IOTM
V
IORM
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
55/110/21
2
CTI
175
399
V
IOTM
V
IORM
R
IO
R
IO
P
SI
I
SI
T
SI
8000
630
10
12
10
11
V
V
Ω
Ω
mA
mW
°C
mm
mm
mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
P
SI
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness
500
300
175
7
7
0.2
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
0.01
0.10
I
F
- Forward Current (mA )
1.00
10.00
100.00
17585
V
F
110 °C
50 °C
25 °C
- 55 °C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 1 2 3 4 5 6 7 8 9 101112131415
V
CE
- Collector Emitter Voltage (V)
17586
I
T
amb
= 25 C,
V
CC
= 5 V, non-saturated
C
I
F
= 25 mA
20 mA
15 mA
10 mA
5 mA
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
V
CE
- Collector Emitter Voltage (V)
17629
I
T
amb
= 25 C,
V
= 5 V,
saturated
C
I
F
= 25 mA
20 mA
15 mA
10 mA
5 mA
1 mA
- 55 - 35 - 15
T
amb
- Ambient Temperature (°C)
5
25
45
65
85 105 125
I
17590
C
100
10
0.1
0.01
1000
V
CC
= V
CE
= 15 V
1
V
CC
= V
CE
= 5 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 6N1136 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>15% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N1136-X006 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>15% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N1136-X007 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated |
| 6N1136-X009 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated |
| 6N1136-X009T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>15% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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