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參數資料
| 型號： | 6N1135 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps, ROHS COMPLIANT, PLASTIC, DIP- 8 |
| 中文描述： | High Speed Optocouplers 1Mbd High-Speed Trans Out CTR>5% |
| 文件頁數： | 2/9頁 |
| 文件大小： | 151K |
| 代理商： | 6N1135 |
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83909
Rev. 1.7, 19-Oct-10
6N1135, 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Base current
Thermal resistance
Power dissipation
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
Storage temperature range
Ambient temperature range
I
B
5
mA
K/W
mW
300
100
T
amb
= 70 °C
P
diss
t = 1 s
V
ISO
5300
V
RMS
T
stg
T
amb
- 55 to + 125
- 55 to + 100
°C
°C
Soldering temperature
(1)
max.
≤
10 s, dip soldering
≥
0.5 mm from case bottom
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 1.6 mA
Breakdown voltage
I
R
= 10 μA
Reverse current
V
R
= 5 V
Capacitance
V
R
= 0 V, f = 1 MHz
Temperature coefficient,
forward voltage
OUTPUT
I
F
= 1.6 mA, V
= open,
V
CC
= 15 V
I
F
= 0 mA, V
O
= open,
V
CC
= 15 V
I
F
= 16 mA, V
= 4.5 V,
I
O
= 1.1 mA,
I
F
= 16 mA, V
= 4.5 V,
I
O
= 2.4 mA
I
F
= 0 mA, V
O
= V
CC
= 5.5 V
I
F
= 0 mA, V
O
= V
CC
= 15 V
COUPLER
Capacitance (input to output)
f = 1 MHz
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
V
BR
I
R
C
I
1.6
1.9
V
V
μA
pF
5
0.5
125
10
I
F
= 1.6 mA
Δ
V
F
/
Δ
T
A
- 1.7
mV/°C
Logic low supply current
I
CCL
150
μA
Logic high supply current
I
CCH
0.01
1
μA
Output voltage, output low
6N1135
V
OL
0.1
0.4
V
6N1136
V
OL
0.1
0.4
V
Output current, output high
I
OH
I
OH
3
500
1
nA
μA
0.01
C
IO
0.6
pF
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
6N1135
6N1136
6N1135
6N1136
SYMBOL
CTR
CTR
CTR
CTR
MIN.
7
19
5
15
TYP.
16
35
MAX.
UNIT
%
%
%
%
Current transfer ratio
I
F
= 16 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 16 mA, V
O
= 0.5 V,
V
CC
= 4.5 V
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 6N1135_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated |
| 6N1135-X006 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>5% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N1135-X007 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated |
| 6N1135-X009T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>5% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N1136 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>15% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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