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參數資料
| 型號： | 6N136 |
| 廠商： | SIEMENS A G |
| 元件分類： | 光電耦合器 |
| 英文描述： | High-Speed TRIOS Optocoupler(晶體管輸出高速TRIOS光耦合器) |
| 中文描述： | 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps |
| 封裝： | DIP-8 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 448K |
| 代理商： | 6N136 |
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
2–62
May 17, 2000-08
FEATURES
Isolation Test Voltage: 5300 V
TTL Compatible
High Bit Rates: 1.0 Mbit/s
High Common-Mode Interference Immunity
Bandwidth 2.0 MHz
Open-Collector Output
External Base Wiring Possible
Field-Effect Stable by TRIOS*
Underwriters Lab File #E52744
VDE #0884 Approval Available with
Option 1
RMS
Description
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an inte-
grated photodetector which consists of a photodiode
and a high-speed transistor in
Signals can be transmitted between two electrically sepa-
rated circuits up to frequencies of 2.0 MHz. The potential dif-
ference between the circuits to be coupled is not allowed to
exceed the maximum permissible reference voltages.
a DIP-8 plastic package.
Maximum Ratings
Emitter
Reverse Voltage ..............................................5.0 V
Forward Current.............................................25 mA
Peak Forward Current
(t =1.0 ms, duty cycle 50%) .........................50 mA
Maximum Surge Forward Current
(t
≤
1.0
μ
s, 300 pulses/s).................................1.0 A
Thermal Resistance................................... 700 K/W
Total Power Dissipation (
T
Detector
Supply Voltage .....................................–0.5 to 15 V
Output Voltage......................................–0.5 to 15 V
Emitter-Base Voltage .......................................5.0 V
Output Current..............................................8.0 mA
Maximum Output Current..............................16 mA
Base Current................................................ 5.0 mA
Thermal Resistance................................... 300 K/W
Total Power Dissipation (
T
Package
Isolation Test Voltage (between emitter and
detector climate per DIN 50014,
part 2, Nov. 74 (t=1.0 s) .....................5300 V
Pollution Degree (DIN VDE 0109).......................2.0
Creepage...................................................
Clearance..................................................
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1,
Group IIIa per DIN VDE 6110 ........................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................
V
IO
=500 V,
T
A
=100
°
C ..............................
Storage Temperature Range ........–55
Ambient Temperature Range....... –55
Soldering Temperature (max.
soldering
≥
0.5 mm from case bottom).......260
A
≤
70
°
C) ...............45 mW
A
≤
70
°
C) .............100 mW
RMS
≥
≥
7.0 mm
7.0 mm
≥
≥
10
10
12
°
°
C
C
11
°
°
C to +125
C to +100
≤
10 s, dip
°
C
V
D E
Characteristics
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Temperature Coeffi-
cient, Forward Voltage
Detector
Supply Current
Logic Low
Supply Current
Logic High
Output Voltage,
Output Low
6N135
6N136
Output Current,
Output High
Output Current,
Output High
Package
Coupling Capaci-
tance, Input-Output
Current Transfer Ratio
6N135
6N136
6N135
6N136
T
A
=0 to 70
°
C unless otherwise specified,
Symbol
Value
V
F
1.6 (
≤
1.9)
V
BR
≥
5.0
I
R
0.5 (
≤
10)
C
O
125
V
F
/
T
A
–1.7
T
A
=25
°
C typ.
*TRIOS
—
TR
ansparent
IO
n
S
hield
Unit
V
Condition
I
F
=16 mA
I
R
=10
V
R
=5.0 V
V
R
=0 V, f=1.0 MHz
I
F
=16 mA
μ
A
μ
pF
mV/
A
°
C
I
CCL
150
μ
A
I
V
I
V
I
V
I
I
I
V
I
V
F
=16 mA,
CC
=15 V
=0 mA,
CC
=15 V
=16 mA,
CC
=4.5 V
O
=1.1 mA
O
=2.4 mA
=0 mA,
O
=
V
CC
=0 mA,
O
=
V
CC
V
O
open,
I
CCH
0.01 (
≤
1)
F
V
O
open,
V
OL
0.1 (
≤
0.4)
V
F
I
OH
3.0 (
≤
6N135
6N136
500)
nA
F
=5.5 V
0.01 (
≤
1)
μ
A
F
=15 V
C
IO
0.6
pF
f=1.0 MHz
CTR
CTR
CTR
CTR
16 (
35 (
≥
5.0
≥
15
≥
≥
7.0)
19)
%
I
V
I
F
=16 mA,
V
O
=0.5 V,
V
CC
=4.5 V
F
=16 mA,
CC
=4.5 V,
T
A
=25
°
C
V
O
=0.4 V,
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4
°
typ.
.100 (2.54) typ.
10
°
3
°
–
9
°
.008 (.20)
.012 (.30)
.300 (7.62)
typ.
.018 (.46)
.022 (.56)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4
3
2
1
.031 (0.79)
.050 (1.27)
5
6
7
8
1
2
3
4
8
7
6
5
Cath)
(V
CC
Base
(V
)
Collector
(V
O
)
Emitter
NC
Anode
Cathode
NC
Dimensions in inches (mm)
High-Speed TRIOS
Optocoupler
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| 6N136#020 | 功能描述:高速光耦合器 1 Mb/s 5000Vrms RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136#060 | 功能描述:高速光耦合器 1 Mb/s 3750Vrms RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136#300 | 功能描述:高速光耦合器 1 Mb/s 3750Vrms RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136#320 | 功能描述:高速光耦合器 1 Mb/s 5000Vrms RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136#500 | 功能描述:高速光耦合器 1 Mb/s 3750Vrms RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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