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參數資料
| 型號： | 6N80 |
| 廠商： | IXYS Corporation |
| 英文描述： | N-Channel Enhancement Mode |
| 中文描述： | N溝道增強模式 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 87K |
| 代理商： | 6N80 |
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
6
A
A
24
180
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD (IXTH)
Standard
Power MOSFET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
V
DSS
800 V
I
D25
6 A
6 A
R
DS(on)
1.8
1.4
IXTH/IXTM 6 N80
IXTH/IXTM 6 N80A 800 V
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
μ
A
800
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
6N80
6N80A
1.8
1.4
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Low package inductance (< 5 nH)
- easy to drive and to protect
G
Fast switching times
Applications
G
Switch-mode and resonant-mode
power supplies
G
Motor controls
G
Uninterruptible Power Supplies (UPS)
G
DC choppers
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
Space savings
G
High power density
91542E(5/96)
D (TAB)
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