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參數資料
| 型號： | FSPYC160D1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 70A條（丁）|貼片 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 108K |
| 代理商： | FSPYC160D1 |
2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. B
FSPYC160R, FSPYC160F
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300 krads
while maintaining the guaranteed performance for Single
Event Effects (SEE) which the Fairchild FS families have
always featured.
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45213W.
Features
70A (Current Limited by Package), 100V, r
DS(ON)
= 0.0105
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100 krad (Si)
- Rated to 300 krad (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 5V Off-Bias
Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 9nA Per-rad (Si)/s Typically
Neutron
- Maintain Pre-rad Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
SMD2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering Samples
FSPYC160D1
100K
TXV
FSPYC160R3
100K
Space
FSPYC160R4
300K
TXV
FSPYC160F3
300K
Space
FSPYC160F4
TM
D
G
S
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| FSPYC160F3 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160F4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160R3 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160R4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC164D1 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 70A I(D) | SMT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSPYC160F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160F4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC160R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT |
| FSPYC164D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 70A I(D) | SMT |
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