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參數資料
| 型號： | 70511 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 75-V (D-S) 200∑C MOSFET |
| 中文描述： | N通道75 - V（下局副局長）200ΣCMOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 177K |
| 代理商： | 70511 |
SPICE Device Model SUM110N08-05
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70511
09-Jun-04
www.vishay.com
1
N-Channel 75-V (D-S) 200°C MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
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