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參數(shù)資料
型號(hào): 70824L25PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi): SRAM
英文描述: 4K X 16 STANDARD SRAM, 25 ns, PQFP80
封裝: TQFP-80
文件頁(yè)數(shù): 16/21頁(yè)
文件大小: 191K
代理商: 70824L25PF
4
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
Military and Commercial Temperature Ranges
Absolute Maximum Ratings(1)
Capacitance
(TA = +25°C, f = 1.0mhz, TQFP only)
RecommendedOperating
Temperature and Supply Voltage
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
Recommended DC Operating
Conditions
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact
your sales office.
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization, but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
Symbol
Rating
Commercial
& Industrial
Military
Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
-65 to +135
oC
TSTG
Storage
Temperature
-65 to +150
oC
IOUT
DC Output
Current
50
mA
3099 tbl 03
Grade
Ambient Temperature
GND
Vcc
Military
-55OC to +125OC0V
5.0V
+ 10%
Commercial
0OC to +70OC0V
5.0V
+ 10%
Industrial
-40OC to +85OC0V
5.0V
+ 10%
3099 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
V
VIH
Input High Voltage
2.2
____
6.0(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.8
V
3099 tbl 05
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT
Output Capacitance
VOUT = 3dV
10
pF
3099 tbl 06
Symbol
Parameter
Test Conditions
70824S
70824L
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current
VCC = 5.5V, VIN = 0V to VCC
___
5
___
1 A
|ILO|
Output Leakage Current
VOUT = 0V to VCC
___
5
___
1 A
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
3099 tbl 07
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