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參數資料
| 型號： | 70V25L25PFGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100 |
| 文件頁數： | 5/25頁 |
| 文件大小： | 211K |
| 代理商： | 70V25L25PFGI |
6.42
13
IDT70V35/34S/L (IDT70V25/24S/L)
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating
Temperature and Supply Voltage for 70V25/24(5)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM,
CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. Either condition must be valid for
the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
Symbol
Parameter
70V25/24X15
Com'l Only
70V25/24X20
Com'l
& Ind
70V25/24X25
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
tAS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
tHZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
tDH
Data Hold Time
(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
12
____
15
ns
tOW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
5624 tbl 12a
Symbol
Parameter
70V25/24X35
Com'l Only
70V25/24X55
Com'l Only
Unit
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
35
____
55
____
ns
tEW
Chip Enable to End-of-Write(3)
30
____
45
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
30
____
ns
tHZ
Output High-Z Time
(1,2)
____
15
____
25
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z
(1,2)
____
15
____
25
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
5624 tbl 12b
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 70V25L25PFGI8 | 功能描述:靜態隨機存取存儲器 8Kx16, 3.3V DUAL- PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V25L25PFI | 功能描述:靜態隨機存取存儲器 8Kx16, 3.3V DUAL- PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V25L25PFI8 | 功能描述:靜態隨機存取存儲器 8Kx16, 3.3V DUAL- PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V25L35G | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 128KBIT 8KX16 35NS 84PIN PGA - Trays |
| 70V25L35J | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 128KBIT 8KX16 35NS 84PLCC - Rail/Tube |
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