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參數資料
| 型號： | 71V416S12YG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 1397K |
| 代理商： | 71V416S12YG |
OCT OBER 2008
DSC-3624/09
1
2004 Integrated Device Technology, Inc.
Features
◆
256K x 16 advanced high-speed CMOS Static RAM
◆
JEDEC Center Power / GND pinout for reduced noise.
◆
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
◆
One Chip Select plus one Output Enable pin
◆
Bidirectional data inputs and outputs directly
LVTTL-compatible
◆
Low power consumption via chip deselect
◆
Upper and Lower Byte Enable Pins
◆
Single 3.3V power supply
◆
Available in 44-pin, 400 mil plastic SOJ package and a 44-
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
Description
The IDT71V416 is a 4,194,304-bit high-speed Static RAMorganized
as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is froma
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V416 is packaged in a 44-pin, 400 ml Plastic SOJ and a
44-pin, 400 ml TSOP Type II package and a 48 ball grid array, 9mmx
9mmpackage.
Functional Block Diagram
Output
Enable
Buffer
Address
Buffers
Chip
Select
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
OE
A0 - A17
Row / Column
Decoders
CS
WE
BHE
BLE
4,194,304-bit
Memory
Array
Sense
Amps
and
Write
Drivers
16
High
Byte
Buffer
High
Byte
Buffer
Low
Byte
Write
Buffer
Low
Byte
Output
Buffer
8
8
8
8
8
8
8
8
I/O 15
I/O 8
I/O 7
I/O 0
3624 drw 01
3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
IDT71V416S
IDT71V416L
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 71V416S12YG8 | 功能描述:靜態隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S12YGI | 功能描述:靜態隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S12YGI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 12NS 44PIN SOJ - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
| 71V416S12YI | 制造商:Integrated Device Technology Inc 功能描述:71V416S12YI, 4MBIT SRAM CHIP ASYNC SINGLE 3.3V 256K X 16 12N - Rail/Tube 制造商:Rochester Electronics LLC 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IDT 71V416S12YI, 4MBit SRAM Chip Async Single 3.3V 256K x 16 12ns 44-Pin SOJ |
| 71V416S15BE | 功能描述:靜態隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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