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參數資料
| 型號： | 72022 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 91K |
| 代理商： | 72022 |
FEATURES
LITTLE FOOT
Plus
Schottky
Si4830DY Pin Compatible
PWM Optimized
100% R
g
Tested
APPLICATIONS
Asymmetrical Buck-Boost DC/DC Converter
Si4370DY
Vishay Siliconix
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel 1
Channel-1
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.022 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
7.5
30
6.5
Channel 2
Channel-2
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
Schottky Diode
Ordering Information:
Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Channel-1
Parameter
Symbol
Channel-1
Channel-2
Channel-2
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
12
20
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
7.5
5.7
6.0
4.6
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
30
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.1
W
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
52
62.5
53
62.5
Steady-State
93
110
93
110
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
35
40
35
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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