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參數資料
| 型號： | 72616 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | 72616 |
FEATURES
TrenchFET Power MOSFET
New PowerPAK Package
Low Thermal Resistance, R
thJC
Low 1.07-mm Profile
APPLICATIONS
Load Switch
Si7413DN
Vishay Siliconix
New Product
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.015 @ V
GS
=
4.5 V
13.2
20
0.020 @ V
GS
=
2.5 V
11.4
0.029 @ V
GS
=
1.8 V
9.5
P-Channel MOSFET
G
D
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7413DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
13.2
8.4
T
A
= 85 C
9.5
6.1
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 85 C
2.0
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
33
Steady State
65
81
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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