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參數資料
型號: 73S1210F-68IM/F/P
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC68
封裝: LEAD FREE, QFN-68
文件頁數: 24/126頁
文件大小: 1231K
代理商: 73S1210F-68IM/F/P
73S1210F Data Sheet
DS_1210F_001
12
Rev. 1.4
specific SFR registers in the proper sequence. These special pattern/sequence requirements prevent
inadvertent erasure of the flash memory.
The mass erase sequence is:
1.
Write 1 to the FLSH_MEEN bit in the FLSHCTL register (SFR address 0xB2[1]).
2.
Write pattern 0xAA to ERASE (SFR address 0x94).
Note: The mass erase cycle can only be initiated when the ICE port is enabled.
The page erase sequence is:
1.
Write the page address to PGADDR (SFR address 0xB7[7:1]).
2.
Write pattern 0x55 to ERASE (SFR address 0x94).
The PGADDR register denotes the page address for page erase. The page size is 512 (200h) bytes and
there are 128 pages within the flash memory. The PGADDR denotes the upper seven bits of the flash
memory address such that bit 7:1 of the PGADDR corresponds to bit 15:9 of the flash memory address.
Bit 0 of the PGADDR is not used and is ignored. The MPU may write to the flash memory. This is one of
the non-volatile storage options available to the user. The FLSHCTL SFR bit FLSH_PWE (flash program
write enable) differentiates 80515 data store instructions (MOVX@DPTR,A) between Flash and XRAM
writes. Before setting FLSH_PWE, all interrupts need to be disabled by setting EAL = 1. Table 3 shows
the location and description of the 73S1210 flash-specific SFRs.
Any flash modifications must set the CPUCLK to operate at 3.6923 MHz (MPUCLKCtl = 0x0C)
before any flash memory operations are executed to insure the proper timing when modifying the
flash memory.
相關PDF資料
PDF描述
73S1210F-44IMR/F/P 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC44
73S1210F-68IMR/F/P 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC68
73S1210F-68IM/F 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC68
73S1210F-44IM/F/P 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC44
73S1210F-68IMR/F 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC68
相關代理商/技術參數
參數描述
73S1210F-68IMR/F 功能描述:8位微控制器 -MCU SoC Smart Card Readr w/PINpad & PWR Mgt RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
73S1210F-68IMR/F/P 功能描述:IC SMART CARD READER PROG 68-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:73S12xx 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:260 系列:73S12xx 核心處理器:80515 芯體尺寸:8-位 速度:24MHz 連通性:I²C,智能卡,UART/USART,USB 外圍設備:LED,POR,WDT 輸入/輸出數:9 程序存儲器容量:64KB(64K x 8) 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數據轉換器:- 振蕩器型:內部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-VFQFN 裸露焊盤 包裝:管件
73S1210F-68M/F/PB 制造商:Maxim Integrated Products 功能描述:- Trays
73S1210F-68M/F/PG 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
73S1210F-68M/F/PH 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
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