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參數(shù)資料
型號: 74HCT640D-T
英文描述: Single 8-Bit Inverting Bus Transceiver
中文描述: 單8位反向總線收發(fā)器
文件頁數(shù): 1/11頁
文件大小: 258K
代理商: 74HCT640D-T
M54/74HC620
M54/74HC623
October 1992
HC620 3 STATE INVERTING HC623 3 STATE NON INVERTING
.
HIGH SPEED
t
PD
= 10 ns(TYP.) AT V
CC
= 5 V
.
LOWPOWER DISSIPATION
I
CC
= 4
μ
A(MAX.) AT T
A
= 25
°
C
.
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
.
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
.
SYMMETRICAL OUTPUT IMPEDANCE
|I
OH
| = I
OL
= 6 mA(MIN.)
.
BALANCEDPROPAGATION DELAYS
t
PLH
= t
PHL
.
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V to 6 V
.
PIN ANDFUNCTION COMPATIBLE
WITH LS620/623
OCTAL BUS TRANSCEIVER
B1R
(Plastic Package)
ORDER CODES :
M54HCXXXF1R
M74HCXXXB1R
M74HCXXXM1R
M74HCXXXC1R
F1R
(CeramicPackage)
M1R
(MicroPackage)
C1R
(Chip Carrier)
PIN CONNECTIONS
(top view)
NC =
No Internal
Connection
DESCRIPTION
The M54/74HC620/623 are high speed CMOS
OCTALBUS TRANSCEIVERS fabricated in silicon
gate C
2
MOS technology. They have the same high
speed performance of LSTTL combined with true
CMOS low powerconsumption.
Theseoctalbus transceivers aredesigned for asyn-
chronous two-way communication between data
buses. The control function implementation allows
maximum flexibility in timing.
These devices allow data transmission from the A
bus to Bbus or from the B to the A bus depending
upon the logic levels at the enable inputs (GBAand
GAB).The enable inputs can beused to disable the
device so that the buses are effectively isolated.
The dual-enable configuration gives these devices
thecapability tostoredataby simultaneousenabling
of GBA and GAB.
Each output reinforces its input in this transceiver
configuration. Thus, when both control inputs are
enabled and all other data sources to the two sets
of bus lines are at high impedance, both sets of bus
lines(16 inall) will remain at their last states. The 8-
bit codes appearing on thetwo sets of buses will be
identical for the ’HC623 or complementary for the
’HC620. All inputs are equipped with protection cir-
cuits against static discharge and transient excess
voltage.
1/11
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