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參數(shù)資料
| 型號： | 75N75-TN3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 75Amps, 75Volts N-CHANNEL POWER MOSTFET |
| 中文描述： | 75安培，75Volts N溝道功率MOSTFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 164K |
| 代理商： | 75N75-TN3-T |
75N75
Power
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-097,A
2 of 8
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
V
DSS
RATINGS
75
75
56
300
20
900
300
15
220
1.4
+150
-55 ~ +150
UNIT
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Drain to Source Voltage
T
C
= 25
T
C
= 100
Continuous Drain Current
I
D
Drain Current Pulsed (Note 1)
Gate to Source Voltage
I
DM
V
GS
E
AS
E
AR
dv/dt
Single Pulsed (Note 2)
Repetitive (Note 1)
Avalanche Energy
Peak Diode Recovery dv/dt (Note 3)
T
C
= 25
Derating above 25
Total Power Dissipation
P
D
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
JC
θ
CS
MIN
TYP
0.5
MAX
62.5
0.8
UNIT
/W
/W
/W
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink
ELECT RICAL CHARACT ERIS T ICS
(T
C
= 25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BV
DSS
V
GS
= 0 V, I
D
= 250 μA
T
J
I
D
= 1mA,
Referenced to 25
V
DS
= 75 V, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V,
T
J
= 150
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
75
V
BV
DSS
/
0.08
V/
20
μA
Drain-Source Leakage Current
I
DSS
250
μA
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
100
-100
nA
nA
I
GSS
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 μA
2.0
4.0
V
R
DS(ON)
V
GS
= 10 V, I
D
= 48 A
12.5
15
m
C
ISS
C
OSS
C
RSS
3300
530
80
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
12
79
80
52
90
20
30
ns
ns
ns
ns
nC
nC
nC
V
DD
= 38V, I
D
=48A,
V
GS
=10V, (Note 4, 5)
140
35
45
V
DS
= 60V, V
GS
= 10 V
I
D
= 48A, (Note 4, 5)
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