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參數資料
| 型號： | 7782 |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，雙行，突發）1.8V電源快閃記憶體 |
| 文件頁數： | 11/63頁 |
| 文件大小： | 435K |
| 代理商： | 7782 |
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M58CR032C, M58CR032D
while V
PP
> V
PP1
enables these functions (see Ta-
ble 19, DC Characteristics for the relevant values).
V
PP
is only sampled at the beginning of a program
or erase; a change in its value after the operation
has started does not have any effect on Program
or Erase, however for Double or Quadruple Word
Program the results are uncertain.
If V
PP
is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition V
PP
must be
stable until the Program/Erase algorithm is com-
pleted (see Table 16 and 17). In read mode the
current sunk is less then 0.5mA, while during pro-
gram and erase operations the current may in-
crease up to 10mA.
V
SS
and V
SSQ
Grounds.
V
SS
and V
SSQ
grounds
are the reference for the core supply and the input/
output voltage measurements respectively.
Note: Each device in a system should have
V
DD
,
V
DDQ
and V
PP
decoupled with a 0.1μF ca-
pacitor close to the pin. See Figure 10, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required V
PP
program and erase currents.
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