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參數資料
型號: 79C0832
廠商: Maxwell Technologies, Inc
英文描述: 8 Megabit (256K x 32-Bit) EEPROM MCM
中文描述: 8兆位(256K x 32位)的EEPROM億立方米
文件頁數: 5/19頁
文件大小: 477K
代理商: 79C0832
M
5
01.10.05 Rev 14
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved
8 Megabit (256K x 32-Bit) EEPROMMCM
79C0832
Output Voltage
Data Lines: V
CC
Mn, I
OL
= 2.1mA
RDY/BSY_Line: V
CC
Mn, I
OL
= 12mA
Data Lines: V
CC
Mn, I
OH
= -400μA
RDY/BSY_Line: V
CC
Mn, I
OH
= -12mA
All Outputs: V
CC
Mn , I
OH
= -100uA
V
OL
V
OL
V
OH
V
OH
1, 2, 3
--
2.4
3.15
V
CC
- 0.3V
0.4
0.4
--
--
--
V
V
V
V
V
1. All Inputs are tied to V
CC
with a 5.5K
W
resistor, except for RES which is 30
K
W
.
2. For RES I
LI
=800uA max.
3. Only one CE Active (Low)
T
ABLE
7. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATION
1
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Access Time CE = OE = V
IL
, WE = V
IH
-150
-200
t
ACC
9, 10, 11
--
--
150
200
ns
Chip Enable Access Time OE = V
IL
, WE = V
IH
-150
-200
t
CE
9, 10, 11
--
--
150
200
ns
Output Enable Access TIme CE = V
IL
, WE = V
IH
-150
-200
t
OE
9, 10, 11
0
0
75
125
ns
Output Hold to Address Change CE = OE =V
IL
, WE = V
IH
-150
-200
t
OH
9, 10, 11
0
0
--
--
ns
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-150
-200
CE = OE = V
IL
, WE = V
IH
-150
-200
t
DF
t
DFR
9, 10, 11
0
0
0
0
50
60
350
450
ns
ns
RES to Output Delay CE = OE = V
IL
, WE = V
IH3
-150
-200
T
RR
9, 10, 11
0
0
450
650
ns
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timng = 0.8 V/1.8 V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
6. 79C0832 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
T
EST
C
ONDITION
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NITS
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79C0832RT1QH-15 8 Megabit (256K x 32-Bit) EEPROM MCM
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參數描述
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