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參數資料
| 型號： | 79LV2040 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | 20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM |
| 中文描述： | 20兆位（為512k × 40位）低電壓的EEPROM億立方米 |
| 文件頁數： | 7/17頁 |
| 文件大小： | 471K |
| 代理商： | 79LV2040 |
M
7
09.07.05 Rev 1
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved
20 Megabit (512K x 40-Bit) EEPROMMCM
79LV2040
Time to Device Busy
-200
-250
t
DB
9, 10, 11
100
120
--
--
ns
Write Start Time
3
-200
-250
t
DW
9, 10, 11
150
250
--
--
ns
RES to Write Setup Time
4
-200
-250
t
RP
9, 10, 11
100
100
--
--
μs
V
CC
to RES Setup Time
4
-200
-250
t
RES
9, 10, 11
1
1
--
--
μs
1. Use this device in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
T
ABLE
8. 79LV2040 M
ODE
S
ELECTION
1
P
ARAMETER
CE
2
OE
WE
I/O
RES
RDY/BUSY
Read
Standby
Write
Deselect
Write Inhibit
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out
3
High-Z
V
H
X
V
H
V
H
X
X
V
H
V
L
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
Data Polling
ProgramReset
1. Refer to the recommended DC operating conditions.
2. For CE
0-3
only one CE can be used (“on”) at a time.
3. Bits 7, 15, 23, 31 and 39
T
ABLE
7. 79LV2040 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATION
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
1
M
AX
U
NITS
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| 79LV2040RPFE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM |
| 79LV2040RPFE-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM |
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| 79LV2040RPFI-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM |
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