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參數(shù)資料
| 型號： | 7MBP100RTB-060 |
| 英文描述： | 8 Pin, 3.5KB Std Flash, 128 RAM, 6 I/O, -40C to +85C, 8-DFN, T/R |
| 中文描述： | 7 IGBT的綜合防治 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 462K |
| 代理商： | 7MBP100RTB-060 |
7MBP 100RA-120
IGBT IPM
1200V
6x100A+Chopper
Intelligent Power Module ( R-Series )
I
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Ratings
Units
Min.
Max.
900
1000
800
1200
100
200
100
735
50
100
50
400
20
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Dynamic Brake
Collector Current
Forward Current of Diode
Collector Power Dissi. DB
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
V
DC
V
DC(Surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
V
CC
V
IN
I
IN
V
ALM
I
ALM
T
j
T
OP
T
stg
V
iso
Mounting *1
Terminals *1
0
0
200
0
Continuous
1ms
Duty=62.6%
One Transistor
Continuous
1ms
A
W
A
One Transistor
W
0
0
V
Z
1
V
CC
15
150
100
125
2500
3.5
3.5
mA
V
mA
0
-20
-40
°C
A.C. 1min.
V
Note:
*1:
Recommendable Value; 2.5
～
3.0 Nm (M5)
Electrical Characteristics of Power Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Collector Current At Off Signal Input
INV
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Collector Current At Off Signal Input
DB
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
I
CES
V
CE(Sat)
V
F
I
CES
V
CE(Sat)
V
F
Conditions
Min.
Typ.
Max.
1.0
2.6
3.0
1.0
2.6
3.3
Units
mA
V
V
mA
V
V
V
CE
=1200V,
Input Termnal Open
I
C
=100A
-I
C
=100A
V
CE
=1200V,
Input Termnal Open
I
C
=50A
-I
C
=50A
Electrical Characteristics of Control Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Current of P-Line Side Driver
(One Unit)
Current of N-Line Side Driver
(Three Units)
Symbols
I
CCP
I
CCN
Conditions
Min.
Typ.
Max.
Units
f
SW
=0~15kHz, T
C
=-20~100°C
f
SW
=0~15kHz, T
C
=-20~100°C
On
Off
R
IN
=20k
V
DC
=0V, I
C
=0A, Case Temp.
3
18
65
10
1.00
1.70
1.35
2.05
8.0
1.70
2.40
V
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
DB Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
I
OC
t
DOC
t
ALM
R
ALM
V
UV
V
H
110
125
20
Surface Of IGBT Chip
150
20
T
j
=125°C
T
j
=125°C
T
j
=25°C
150
75
10
2
1500
μs
ms
1.5
1425
11.0
0.2
1575
12.5
Dynamic Characteristics
( at T
C
=T
j
=125°C, V
CC
=15V )
Items
Symbols
t
ON
t
OFF
t
RR
Conditions
Min.
0.3
Typ.
Max.
Units
I
C
=100A, V
DC
=600V
Switching Time
3.6
0.4
μs
I
F
=100A, V
DC
=600V
I
Outline Drawing
Screw Torque
V
IN(th)
Input Signal Threshold Voltage
V
V
Nm
mA
°C
A
V
相關PDF資料 |
PDF描述 |
|---|---|
| 7MBP100RTJ-060 | 8 pin PIC w/CCP/PWM, 10 bit A2D, comparator, midrange core, 2K words flash, -40C to +85C, 8-SOIC 150mil, T/R |
| 7MBP100TEA-060 | 7 IPM IGBT |
| 7MBP150RA-120 | 7 IPM IGBT |
| 7MBP150RTB-060 | 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8 MHZ INTERNAL OSCILLATOR, -40C to +85C, 8-SOIC 150mil, TUBE |
| 7MBP150RTJ-060 | 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8MHZ INTERNAL OSCILLATOR, -40C to +85C, 8-DFN, T/R |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBP100RTJ-060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBTs |
| 7MBP100TEA060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Econo IPM series 600V / 100A 7 in one-package |
| 7MBP100TEA-060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:7 IPM IGBT |
| 7MBP100VDA060-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 600V / 100A / IPM |
| 7MBP100VDA120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 1200V / 100A / IPM |
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