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參數資料
型號: 7MBR35SB-140
英文描述: MCU CMOS 20LD .5K 20MHz, 0C to +70C, 20-SSOP 208mil, TUBE
中文描述: IGBT的
文件頁數: 1/6頁
文件大小: 325K
代理商: 7MBR35SB-140
7MBR30NE060
IGBT Modules
IGBT MODULE
600V / 30A / PIM
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for
Motor
Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
C
I
FSM
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
I
F(AV)
I
FSM
V
RRM
V
RSM
I
O
T
j
T
stg
V
iso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
600
±20
30
60
30
120
600
±20
30
60
120
600
1
50
800
900
50
350
648
+150
-40 to +125
AC 2500
1.7 *
1
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A2s
°C
°C
V
N·m
*
1
Recommendable value : 1.3 to 1.7 N·m (M4)
相關PDF資料
PDF描述
7MBR35UA-120 MCU CMOS 20LD .5K 20MHz, -40C to +85C, 20-SSOP 208mil, TUBE
7MBR50NE060 MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-SOIC 300mil, T/R
7MBR50NF-060 MCU CMOS 20LD LOW PWR, 0C to +70C, 20-SSOP 208mil, TUBE
7MBR50SB-060 MCU CMOS 20LD LOW PWR, -40C to +85C, 20-SSOP 208mil, T/R
7MBR50SB-140 MCU CMOS 18LD LOW VOLT, -40C to +85C, 18-SOIC 300mil, TUBE
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