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參數資料
| 型號： | 8550SS |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TO-92 Plastic-Encapsulate Transistors |
| 中文描述： | 至92塑料封裝晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 389K |
| 代理商： | 8550SS |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550SS
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 1W
Tamb=25
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: - 40V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
A
I
E
=0
-40
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -0.1 mA , I
B
=0
-25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-6
V
Collector cut-off current
I
CBO
V
CB
= -40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20 V , I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5 V , I
C
=0
-0.1
A
h
FE 1
V
CE
= -1V , I
C
=-100 mA
85
300
DC current gain
h
FE 2
V
CE
=-1V , I
C
=-800 mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-800 m,I
B
=-80 mA
-0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-800mA,I
B
=-80 mA
-1.2
V
Transition frequency
f
T
V
CE
=-10 V, I
C
=-50mA
f =30
MHz
100
MHz
CLASSIFICATION OF h
FE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
1
2
3
TO
92
1.EMITTER
2. COLLECTOR
3. BASE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 8550SS-C | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Transistors |
| 8550SS-D | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Transistors |
| 8550SST | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 8550S-TO-92 | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR（ PNP ） |
| 8550S-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
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