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參數(shù)資料
| 型號： | 85EPS12JPBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 85 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | POWIRTAB-1 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 120K |
| 代理商： | 85EPS12JPBF |
I
F(AV)
Sine waveform
@ T
C
= 95° C
I
F(RMS)
160
A
V
RRM
range (*)
800 and 1200
V
I
FSM
1400
A
V
F
@85A,T
J
=25°C
1.15
V
T
J
range
- 40 to 150
°C
Characteristics
85EPS..
Units
85
A
Major Ratings and Characteristics
Description/ Features
The 85EPS.. rectifier
SAFE
IR series has been
optimized for very low forward voltage drop, with
moderate leakage.
The glass passivation technology used has reliable
operation up to 150° C junction temperature.
Available in the new Pow
IRtabTM package, this new
series is suitable for a large range of applications
combining excellent die to footprint ratio and sturdeness
connectivity for use in high current environments.
Bulletin I2139 rev. C 10/02
I
F(RMS) = 160A
V
F
< 1.15V @ 85A
I
FSM
= 1400A
V
RRM
800 and 1200V
SAFE
IR Series
85EPS..
INPUT RECTIFIER DIODE
1
(*)
for higher voltage up to 1600V contact factory
Case Styles
85EPS..
85EPS..J
www.irf.com
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 85F100 | 功能描述:線繞電阻器 - 透孔 5watt 100ohm 1% Axial RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
| 85F100E | 功能描述:線繞電阻器 - 透孔 5watt 100ohm 1% Axial RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
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