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參數資料
| 型號： | 89LV1632RPQE-30 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | SRAM |
| 英文描述： | 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 中文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 |
| 封裝： | HERMETIC, CERAMIC, QFP-68 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 198K |
| 代理商： | 89LV1632RPQE-30 |
1
M
All data sheets are subject to change without notice
(619) 503-3300 - Fax: (619) 503-3301 - wwwmaxwell.com
16 Megabit (512K x 32-Bit)
Low Voltage MCMSRAM
89LV1632
2005 Maxwell Technologies.
All rights reserved.
08.18.05 Rev 3
F
EATURES
:
Four 512k x 8 SRAMdie
R
AD
-P
AK
technology hardens against natural space radia-
tion technology
Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single Event Effects:
- SEL > 101MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 8E-9 cm
2
/bit
Package: 68-pin quad flat package
Completely static memory - no clock or timng strobe
required
Internal bypass capacitor
High-speed silicon-gate CMOS technology
3.3 V ± 10% power supply
Equal address and chip enable access times
Three-state outputs
All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static RandomAccess Memory
features a greater than 100 krad(Si) total dose tolerance,
depending upon space mssion. The four 4-Megabit SRAMdie
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramc package. With high-perfor-
mance silicon-gate CMOS technology, the 89LV1632 reduces
power consumption and elimnates the need for external
clocks or timng strobes. It is equipped with output enable
(OE) and four byte chip enable (CS1 - CS4) inputs to allow
greater systemflexibility. When OE input is high, the output is
forced to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. In a GEO orbit, R
AD
-P
AK
packaging provides greater
than 100 krad(Si) total radiation dose tolerance, dependent
upon space mssion. It elimnates the need for box shielding
while providing the required radiation shielding for a lifetime in
orbit or a space mssion. This product is available in with
screening up to Maxwell Technologies self-defined Class K.
CS 1-4
MCM
OE, WE
Address
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Power
Ground
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
16 Megabit (512k x 32-bit) SRAM MCM
Logic Diagram
89LV1632
相關PDF資料 |
PDF描述 |
|---|---|
| 89LV1632 | 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 89LV1632RPQH-30 | SW,BTN,SPDT,1A,120VAC, (870720) |
| 89LV1632RPQI-30 | 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 89LV1632RPQK-30 | 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 89LV1632RPQH-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 89LV1632RPQI-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 89LV1632RPQK-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM |
| 89LV55 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Bit Microcontroller with 20K Bytes Flash |
| 89M6KDGG-1NDG | 制造商:Legacy Electronics Inc 功能描述:1GB ECC UNBUFFERED DDR333 - Bulk |
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