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參數資料
| 型號： | 9013B |
| 廠商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 9013B |
May.2004
Version :0.0
Page 1 of 1
9013B Silicon NPN Epitaxial Transistor
Description :The 9013B is designed for audio frequency general amplifier applications
Features: ●Excellent hFE Linearity
●Complementary to 9012B
Chip Appearance
Chip Size
490um×490um
Chip Thickness
210±20um
Base
110um×110um
Bonding Pad Size
Emitter
110um×110um
Front Metal
Al
Backside Metal
Au(As)
Scribe line width
55um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min
Max
Unit
Collector Cutoff Current
ICBO
VCB=35V, IE=0
0.1
uA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
0.1
uA
Collector-Base Breakdown Voltage
BVCBO
IC=0.1mA
40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
25
V
Emitter-Base Breakdown Voltage
BVEBO
IE=0.1mA
5
V
DC Current Gain
hFE
VCE=1V, IC=50mA
150
400
Collector Saturation Voltage
VCE(sat)
IC=500mA,IB=50mA
0.5
V
9013B
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| 9013L-D-T92-K | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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