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參數資料
型號: 9014L-D-T92-B
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: LEAD FREE PACKAGE-3
文件頁數: 2/3頁
文件大小: 63K
代理商: 9014L-D-T92-B
9014
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-031.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Dissipation
PC
450
mW
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100A, IE=0
50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
45
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100A, IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=50V, IE=0
50
nA
Emitter Cut-Off Current
IEBO
VEB=5V, IC=0
100
nA
DC Current Gain
hFE
VCE=5V, IC=1mA
60
280
1000
Collector-Emitter saturation voltage
VCE(SAT)
IC=100mA, IB=5mA
0.14
0.3
V
Base-Emitter saturation voltage
VBE(SAT)
IC=100mA, IB=5mA
0.84
1.0
V
Base-Emitter on voltage
VBE(ON)
VCE=5V, IC=2mA
0.58
0.63
0.7
V
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.2
3.5
pF
Current Gain-Bandwidth Porduct
fT
VCE=5V, IC=10mA
150
270
MHz
Noise Figure
NF
VCE=5V, IC=0.2mA
f=1KHz, RS=2K
0.9
10
dB
CLASSIFICATION OF hFE
RANK
A
B
C
D
RANGE
60-150
100-300
200-600
400-1000
相關PDF資料
PDF描述
9014-D-T92-B 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
9014L-A-T92-K 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
9014-B-T92-B 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
9014L-C-T92-B 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
9014L-C-T92-K 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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