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參數資料
型號: 933363630113
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.8 A, 1000 V, SILICON, SIGNAL DIODE
文件頁數: 4/9頁
文件大?。?/td> 81K
代理商: 933363630113
1996 Oct 03
4
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5; lead length 10 mm.
handbook, halfpage
3
2
1
0
MBG044
0
40
200
80
120
160
Ttp (°C)
IF(AV)
(A)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5; device mounted as shown in Fig.9.
handbook, halfpage
0
IF(AV)
(A)
40
200
1.6
1.2
0.4
0
0.8
80
120
160
Tamb (°C)
MBG054
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
handbook, halfpage
01
23
4
3
1
0
2
MGC745
2
P
(W)
I
F(AV)
(A)
1.42
2.5
a = 3
1.57
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
0
1200
0
MBH387
100
200
800
400
VR (V)
Tj
(
°C)
55
54
56
相關PDF資料
PDF描述
933363630133 0.8 A, 1000 V, SILICON, SIGNAL DIODE
933363620133 0.8 A, 800 V, SILICON, SIGNAL DIODE
933363620113 0.8 A, 800 V, SILICON, SIGNAL DIODE
933363610113 0.8 A, 600 V, SILICON, SIGNAL DIODE
933363630163 0.8 A, 1000 V, SILICON, SIGNAL DIODE
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