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參數資料
| 型號： | 933500080113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3.7 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 60K |
| 代理商： | 933500080113 |
1996 Jun 07
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW96 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 5 A; Tj =Tj max; see Fig.8
1.25
V
IF = 5 A; see Fig.8
1.50
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYW96D
900
V
BYW96E
1100
V
IR
reverse current
VR =VRRMmax;
see Fig.9
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.9
150
A
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.12
300
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.10
75
pF
maximum slope of
reverse recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = 1A/s;
see Fig.13
6A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
dI
R
dt
--------
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