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參數(shù)資料
| 型號(hào)： | 933529920127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 38K |
| 代理商： | 933529920127 |
Philips Semiconductors
Product specification
Triacs
BT137-600D
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triac in a
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope, intended for use in
general purpose bidirectional switching
BT137-
600D
and phase control applications. This
V
DRM
Repetitive peak off-state voltages
600
V
device is intended to be interfaced
I
T(RMS)
RMS on-state current
8
A
directly
to
microcontrollers,
logic
I
TSM
Non-repetitive peak on-state current
65
A
integrated circuits and other low power
gate trigger circuits.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
Repetitive peak off-state
-
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb ≤ 102 C
-
8
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I
2tI2t for fusing
t = 10 ms
-
21
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 12 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/s
triggering
T2+ G+
-
50
A/
s
T2+ G-
-
50
A/
s
T2- G-
-
50
A/
s
T2- G+
-
10
A/
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
12 3
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
June 2001
1
Rev 1.000
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