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參數(shù)資料
| 型號： | 933624750153 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.03 A, SILICON, SIGNAL DIODE, DO-34 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 27K |
| 代理商： | 933624750153 |
1996 Mar 20
2
Philips Semiconductors
Product specication
Schottky barrier diodes
BAT81; BAT82; BAT83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed leaded glass
package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
MAM193
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
BAT81
40
V
BAT82
50
V
BAT83
60
V
IF
continuous forward current
30
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
150
mA
IFSM
non-repetitive peak forward current
tp ≤ 10 ms
500
mA
Tstg
storage temperature
65
150
°C
Tj
junction temperature
125
°C
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