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參數資料
| 型號： | 933624760113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE, DO-34 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 50K |
| 代理商： | 933624760113 |
2000 May 25
2
Philips Semiconductors
Product specication
Schottky barrier diode
BAT85
FEATURES
Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
MAM193
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IF(AV)
average forward current
PCB mounting, lead length = 4 mm;
VRWM = 25 V; a = 1.57; δ = 0.5;
Tamb =50 °C; see Fig.2
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp ≤ 10 ms
5A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
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