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參數(shù)資料
| 型號： | 933698470112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PSIP4 |
| 封裝： | PLASTIC, SOT-195, FP-4 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 67K |
| 代理商： | 933698470112 |
1998 Mar 31
4
Philips Semiconductors
Product specication
Magnetic eld sensor
KMZ10B
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C; Hx = 3 kA/m; note 1.
Notes
1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field
Hx = 3 kA/m.
2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
3.
.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
180
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
bridge supply voltage
5
V
Hy
magnetic eld strength
2
+2
kA/m
S
sensitivity
open circuit, notes 2 and 3
3.2
4.8
TCVO
temperature coefcient of
output voltage
VCC =5V;
Tj = 25 to +125 °C
0.4
%/K
IB = 3 mA;
Tj = 25 to +125 °C
0.1
%/K
Rbridge
bridge resistance
1.6
2.6
k
TCRbridge temperature coefcient of
bridge resistance
Tbridge = 25 to +125 °C
0.3
%/K
Voffset
offset voltage
1.5
+1.5
mV/V
TCVoffset
offset voltage drift
Tj = 25 to +125 °C
3
+3
FL
linearity deviation of output
voltage
Hy =0to ±1 kA/m
±0.5
%
FS
Hy =0to ±1.6 kA/m
±1.7
%
FS
Hy =0to ±2 kA/m
±2%FS
FH
hysteresis of output voltage
0.5
%
FS
f
operating frequency
0
1
MHz
mV V
kA m
-----------------
VV
K
---------------
S
V
O at Hy
1.6 kA m
=
()
V
O at Hy
0
=
()
–
1.6
V
CC
×
----------------------------------------------------------------------------------------------------------------
=
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