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參數資料
| 型號： | 933703440127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | 933703440127 |
Philips Semiconductors
Product specification
Damper diode
BY359-1500, BY359-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 1500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.8 V / 2 V
High thermal cycling performance
Low thermal resistance
I
F(RMS) = 15.7 A
I
FSM ≤ 60 A
t
rr ≤ 600 ns / 350 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
cathode
and soft recovery characteristic.
The device is intended for use in TV
2
anode
receivers and PC monitors.
tab
cathode
The BY359 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse voltage
-
1500
V
RWM
Crest working reverse voltage
-
1300
V
I
F(peak)
Peak forward current
16-32kHz TV
BY359-1500
-
10
A
31-70kHz monitor
BY359-1500S
-
7
A
I
F(RMS)
RMS forward current
-
15.7
A
I
FRM
Peak repetitive forward current
sinusoidal; a = 1.57
-
60
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T
j = 150 C prior to surge;
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2.0
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
1
tab
2
September 1998
1
Rev 1.300
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